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--FSRC

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First Rate Research Achievements
in Science Worldwide

 


FRONTIER SCIENCE RESEARCH CONFERENCE


SCIENCE and TECHNOLOGY of
FERROELECTRIC MATERIALS--2000

January 24-26 , 2000, La Jolla, California

7th FRONTIER SCIENCE RESEARCH CONFERENCE in
MATERIALS SCIENCE and TECHNOLOGY Series



LA JOLLA INTERNATIONAL SCHOOL OF SCIENCE

THE INSTITUTE
FOR ADVANCED PHYSICS STUDIES
La Jolla , Ca 92038-2946

La Jolla, CA 92038-2946

 


 



FRONTIER-SCIENCE RESEARCH CONFERENCES
La Jolla International School of Science
The Institute for Advanced Physics Studies
La Jolla, CA 92038-2946
www.stefan-university.edu/conferences.html


 

SCIENCE and TECHNOLOGY of
FERROELECTRIC MATERIALS

January 24-26 , 2000, La Jolla, California


 

INVITED TALKS

Research talks(up to 30) are given by the invited speakers (usually leaders of the

research groups or,if they decide so,by their collaborators or PhD students) nominated

by the members of the Steering and Executive Committees. The time allowed for each

talk is 25 min + 10 min for discussion or,35min total.

We encourage our speakers to immidiately define the problems of their topics and subsequently present ways toward their solution.




Aharon J. Agranat

Department of Applied Physics
The Hebrew University
Jerusalem 91904, ISRAEL.


The photorefractive effect in the region of the ferroelectric phase
transition and its application for electroholographic switching devices

 

 

R.E. Alonso and A. Lopez Garcia,

Departamento de Fisica,
Universidad Nacional de La Plata,
CC67, CP 1900 La Plata, Argentina

Relation between vacancy-charge distribution and the EFG in cubic
perovskite-type compounds

 


 

Shizutoshi ANDO and Takeyo TSUKAMOTO

Department of Applied Physics, Faculty of Science, Science
University of Tokyo

Preparation of Tungsten Bronze Structured Ferroelectric
Ba2NaNb5O15 Thin Films and Their Characterizations.


 

O. Auciello

Argonne National Laboratory
Materials Science Division
Argonne, IL 60439

A.R. Krauss, J. Im, and A.M. Dhote

Argonne National Laboratory
Materials Science and Chemistry Divisions
Argonne, IL 60439

E.A. Irene, Y. Gao, and A.H. Muller

University of North Carolina
Dept of Chemistry
Chapel Hill, NC 27599

C. Thompson,

Northern Illinois University
and Argonne National Laboratory
Argonne, IL 60439


S.K. Streiffer, G.B. Stephenson, J.A. Eastman, and G. Bai

Argonne National Laboratory
Materials Science Division
Argonne, IL 60439


M.J. Bedzyk, A. Kazimirov, and D. Marasco

Northwestern University
Department of Materials Science and Engineering
Evanston, IL 60208

V.P. Dravid

Northwestern University
Department of Materials Science and Engineering
Evanston, IL 60208


A. Gruverman

Sony Yokohama Research Center
Yokohama , Japan


S. Aggarwal and R. Ramesh,

University of Maryland
Dept of Materials and Nuclear Engineering
College Park, MD 20742

S.-H. Kim and A.I. Kingon

North Carolina State University
Materials Science and Engineering Department
Raleigh, NC 27695


C.B. Eom

Duke University
Department of Materials Science and Engineering
Durham, NC 27708

 

STUDIES OF FERROELECTRIC THIN FILM AND FILM-BASED DEVICE PROCESSES VIA IN SITU ANALYTICAL TECHNIQUES

 


K.Z. Baba-Kishi

The Hong Kong Poly. University,
Dept. Applied Physics,
Hung Hom, Hung Kong.

Neutron, X-ray and electron diffraction studies of the crystal structures of Relaxor ferroelectric Pb2ScTaO6 and Pb2ScNbO6 and antiferroelectric Pb2MgWO6


A.Binder*, K.Knorr* and Yu.F.Markov**

* Technische Physik, Universität des Saarlandes, 66041 Saarbrücken,
Germany
** A.F.Ioffe Physicotechnical Institute, St. Petersburg, Russia

Mechanical measurements on the improper ferroelastic calomel

 

 

 

R. Blinc, R. Pirc, B. Zalar,A. Gregorovic

Jozef Stefan Institute,
Jamova 39, 1000 Ljubljana,
Slovenia

The Spherical Random Bond - Random Field Model of Relaxor Ferroelectrics: Theory and Experiments

 

 

 

L. Blinov, V. Fridkin


Institute of Crystalography

Russian Academy of Sciences

117333 Moscow, Russia


A. Bune, P. Dowben, S. Ducharme, S. Palto


Department of Physics and Astronomy

Center for Materials Research and Analysis

University of Nebraska

Lincoln, NE 68588-0111


Two Dimensional Ferroelectrics

C.R.Bowen, A.Perry and R.Stevens

Department of Materials Science & Engineering
University of Bath
Bath BA2 7AY
UK

Materials parameters determining the performance of piezoelectric
3-3 composites


 

 

 

Annette Bussmann-Holder

Max-Planck-Institut for Solid State Research
Heisenbergstr.1
D-70569 Stuttgart, Germany

Stabilization of Ferroelectricity in Quantum Paraelectrics
by Isotopic Substitution

 


 

Annette Bussmann-Holder

Max-Planck-Institut for Solid State Research
Heisenbergstr.1
D-70569 Stuttgart, Germany

New Understanding of the Phase Transition Mechanism of Hydrogen-
Bonded Ferroelectrics

 

 

 

Hervé CAILLEAU

Groupe Matière Condensée et Matériaux
UMR 6626 CNRS-Université de Rennes 1
Bat 11A, Campus de Beaulieu
35042 RENNES Cedex, FRANCE

New mechanism of molecular ferroelectricity: thermo- and photo-induced neutral-ionic transformation

 

 

 

 

G. Castellanos

Centro de Investigacion en Materiales
DIP-Cucei. Universidad de Guadalajara
Apdo. Postal 2-638
44281 Guadalajara Jal.Mexico

Boracites: A Structural family presenting Ferroic Phase Transitions

 

 

 

 


 

C. B. Eom

Department of Mechanical Engineering and Materials Science
Duke University, Durham, NC 27708

Piezoelectric Heterostructures for Medical Ultrasound Transducer
Applications

 

 

 

Stefan Geis

University of Wuerzburg
Wuerzburg,Gerrmany

Temperature and Field Dependent Dielectric Properties of PZT-Aerogels

 

 

 

 


A. Gruverman

Sony Corporation Research Center

Scanning Force Microscopy Approach:Polarization Phenomena

at Ferroelectrics at Nanoscale

 

 

 

 

SinIchi Hamazaki, Fuminao Shimizu and Masaaki Takashige.

College of Science and Engineering,
Iwaki Meisei University
5-5-1 Chouhdai, Iwaki,
Fukushima 970-8551, Japan

Surface Topography of Ferroic Crystals Observed by Scanning Probe Micrcroscopy

 

 



Jin-ping Han

Department of Electric Engineering,
and Center for Microelectronic Materials and Structures,
Yale University,
New Haven, CT 06520.

Ferroelectric DRAM cell without a storage capacitor

 

 


Takehito JIMBO1, Hiroshi Funakubo2, Eisuke Tokumitsu3 and Hiroshi Ishiwara1,3

1 Frontier Collaborative Research Center,
2 Interdisciplinary Graduate School of Science and Engineering,
3 Precision and Intelligence Laboratory,
Tokyo Institute of Technology,
4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Preparation and characterization of
SrBi2Ta2O9 ferroelectric thin films by liquid delivery MOCVD


 

 

Noritaka Kato, Kentaro Saito, Toshinori Serata, Hiroaki Aida, and Yoshiaki Uesu.

Department of Physics,
Waseda University, 3-4-1, Okubo,
Shinjuku-ku, Tokyo 169-8555, Japan.

Investigation of the two-dimensional polar molecular assembly using multipurpose nonlinear optical microscope.

 

 

Jong-Jean Kim, Yun-Seok Choi, and Bog-Gi Kim

Physics Department and Center for Molecular Science
Korea Advanced Institute of Science and Technology
Taejon 305-701, Korea

Relaxation Time Distribution Functions of Dipole Glass and Crossover
Phenomena in Freezing Dynamics

 

 

D.G.KIM and H.G. KIM


DEPARTMENT OF MATERIAL SCIENCE AND ENGINEERING
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

CHARACTERIZATION OF THE PIEZOELECTRIC THIN FILMS

 

 

 

R. Kind, N. Korner, Th. Koenig and Ch. Jeitziner

Institute of Quantum Electronics
ETH-Hoenggerberg
CH-8093 Zurich, Switzerland

Ferroelectric and anti-ferroelectric
ordering in KDP-type crystals under the influence of competing interactions


 

 

Oliver Kircher, Gregor Diezemann and Roland Böhmer

Institut f. Physikalische Chemie
Welderweg 15
D-55099 Mainz

Nonresonant Dielectric Holeburning on a Relaxor Ferroelectric -
Experiments and Models

 

 

L. Kirpichnikova

Institute of Crystalography

Russian Academy of Sciences

117333 Moscow, Russia

Ferroelastic Twinning in Some Extremely Plastic Crystals

 

 


Wolfgang Kleemann

Laboratorium fuer Angewandte Physik
Gerhard-Mercator-Universitaet
D-47048 Duisburg, Germany

SBN: a uniaxial random-field dominated relaxor ferroelectric

 

 

 

Eriks Klotins

University of Latvia
Inst. of Solid State Physics
8 Kengaraga Street
LV-1063 Riga
LATVI

Modelling of high field electromechanical response of piezoceramics

 

 

 

Eriks Klotins

University of Latvia
Inst. of Solid State Physics
8 Kengaraga Street
LV-1063 Riga
LATVIA

Modelling of the long-range elastic fields in ABO3 ferroelectrics

 

 

 

 

A. Kojima(1), K. Tozaki(2), Y. Yoshimura and H. Iwasaki(3)

(1) Depertment of Materials Science, School of Engineering,
The University of Shiga Prefecture, Hikone, Shiga 522-8533, Japan
(2) Department of Physics, Faculty of Education, Chiba University,
Inage, Chiba 263-8522, Japan
(3) Faculty of Science and Engineering, Ritsumeikan University,
Kusatsu, Shiga 525-8577, Japan

Superfine anomalies of the cubic-to-tetragonal phase transition in
perovskite-type ferroelectrics detected by "mK-stabilized cell

 

 

 

Seiji Kojima

Institute of Materials Science, University of Tsukuba,
Tsukuba, Ibaraki 305-8573, Japan

Vibrational Properties of SBT and Related
Ferroelectrics

 

 

Vladimir Koval', Jaroslav Briancin, Lubomir Medvecky,
Jan Mihalik and Jarmila Trpcevska

Institute of Materials Research
Slovak Academy of Sciences
Watsonova 47
043 53 Kosice
SLOVAK REPUBLIC

POLARIZATION AND FERROLELECTRIC ORDERING

 


S. O. Kramarov

Physical-Technical Institute

Russian Academy of Sciences

420029 Kazan, Russia

Unusual Effects in Ferroelectrics Under Action of

Stress and Electric Field

 

 

 

 

A. Krauss

Argonne National Laboratory

Materials Science Division

Argonne, IL 60439


Thin Film Growth, Interdiffusion, and Hydrogen-Induced

Degradation Phenomena Pb(ZrxTi1-x)03(PZT)and SrBi2ta209(SBT)

Ferroelectric Capacitors

 

 

 

J. K. Krueger*, H. Schmitt*, B. Ploss**

*Fachbereich Physik, Universität des Saarlandes, Bau 38,
D-66123 Saarbrücken
**Dept. Applied Physics,
Hong Kong Polytechnique University,
Kowloon Hong Kong

Induced Long Range Order In Solids And Liquid Crystals On Nanostructured PTFE

 


 

 


Minoru K. Kurosawa*, Takeshi Morita**, Takefumi Kanda***,
Hidehiko Yasui***
and Toshiro Higuchi***

*Tokyo Institute of Technology, **The Institute of Physical and Chemical
Research,
***The University of Tokyo

Hydrothermal PZT thin film and its application to actuators and sensors

 

 

 

 


Nathascia Lampis#, Alessandra Geddo Lehmann#, Philippe Sciau*

# Dipartimento di Fisica e INFM, Cittadella Universitaria, Strada
Provinciale Monserrato-Sestu Km 0.700, 09042 Monserrato (CA), Italy
* CEMES-CNRS, 29 rue Jeanne Marvig, BP 4347, 31055 Toulouse Cedex, France

A discussion on the crystal structures of the Pb-based complex perovskites
PbFe0.5Nb0.5O3 and PbFe0.5Ta0.5O3

 



S. Lanceros-Mendez

(Dept. of Physics, University of Minho, 4719 Braga, Portugal)

V.H. Schmidt

(Dept. of Physics, Montana State University-Bozeman, MT 59717, USA)

S. A. Shapiro

(Brookhaven National Laboratory, Upton, NY 11973)

N. J. Pinto

(Dept. of Physics and Electronics, University of Puerto Rico, Humacao, PR 00791, USA)

Phase coexistence in mixed crystals of the KDP family

 

 

 

Jaichan Lee

Dept. of Materials Enginering
Sungkyunkwan University
Suwon, 440-746, KOREA


Reliability and oxygen-related defects of ferroelectric thin
films for ferroelectric random access memories

 

 

 

 

M. H. Lente and J. A. Eiras

Ferroelectric Ceramics Research Group
Sao Carlos - Brazil

The Switching Polarization Process in PZT Ceramics Analyzed by
Transient Current and Hysteresis Loop Measurements

 


J. Lettieri, M. A. Zurbuchen, Y. Jia, and D. G. Schlom

The Pennsylvania State University
University Park, PA

S. K. Streiffer
Argonne National Laboratory
Argonne, IL

M. E. Hawley
Los Alamos National Laboratory
Los Alamos, NM

Investigation of the Anisotropy of n=2 Aurivillius Compounds
Through Epitaxial Growth

 

 


I.N.Lin1), K.S.Liu2) and H.F.Cheng3)

1)Materials Science Center,
2)Department of Materials Science and Engineering,
National Tsing-Hua University, Hsin-Chu, 300;
3)Department of Physics,
National Taiwan Normal University,
Taipei 117; Taiwan, 300, Republic of China.

How the buffer layers improve the electrical properties of lead-based
ferroelectric thin films

 

 

I.N.Lin1), K.S.Liu2), C.T.Hu2), H.F.Cheng3) and C.C.Chou4),

1)Materials Science Center,
2)Department of Materials Science and Engineering,
National Tsing-Hua University, Hsin-Chu, 300;
3)Department of Physics, National Taiwan Normal University, Taipei 117;
4)Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, 300, Republic of China.

On the microwave sintering technology for improving the properties of semiconducting electronic ceramics

 

 

 

 

Chung-Hsin LU

Department of Chemical Engineering
National Taiwan University
No. 1, Sec. 4, Roosevelt Rd.,
Taipei, Taiwan

Synthesis and Characterization of Layered Aurivillus Perovskites used in
Ferroelectric Random Access Memory

 

 

 

 

 

S.B. Majumder and R.S. Katiyar

PO Box 23343, Department of Physics, University of Puerto Rico
Rio Piedras Campus, San Juan, PR 00931-3343

Investigations on Sol-Gel derived Rare Earth
Doped Ferroelectric Thin Films

 

 

R. F. Mamin

Kazan Physicsal-Technical Institute of Russian Academy of Sciences

420029 Kazan, Russia

New Ideas in Relaxor Theory

 

 

 


Yasumitsu Matsuo, Keisuke Takahashi and Seiichiro Ikehata

Department of Applied Physics,
Faculty of Science,
Science University of Tokyo


NMR study in Rb3H(SeO4)2


 

 

K.Morishita

Tokyo Institute of Technology,
Oh-okayama, Meguro-ku,
Tokyo 152-8551, Japan

The Relation between Ferroelectric and Magnetic
Transitions in a Hexagonal RbCoBr_3

 


 

Kazuhiro Nonaka, Morito Akiyama, Tsuyoshi Hagio, and Akira
Takase

Functional Ceramics Section, Inorganic Composite
Materials Department, Kyushu National Industrial Research Institute,
Agency of Industrial Science and Technology (AIST), Ministry of
International Trade and Industry (MITI), 807-1 Shuku-machi, Tosu,
Saga 841-0052
Japan

Photovoltaic Effect in Pb(Zr,Ti)O3 (PZT)-based Ceramics and
Development for Photostrictor Application

 

 


Toshio Ogawa

Shizuoka Institute of Science and Technology,
2200-2, Toyosawa, Fukuroi, Shizuoka,
437-8555 Japan

Evaluation of Ferroelectric Domains in Lead Zirconate Titanate Ceramics
by Poling Fields

 

 

Masanori OKUYAMA

Area of Materials and Device Physics,
Department of Phsical Science, Graduate School of Engineering Science,
Osaka University, 1-3 Machikaneyama-cho,
Toyonaka, Osaka 560-8531, Japan

Low-Temperature Preparation of SrBi2Ta2O7 Thin
Films andTheir Application to MFIS Structure


 

A. Onodera and H. Satoh,

Department of Physics, Hokkaido University, Sapporo 060-0074, Japan.

Novel Electronic Phase Transition in II-VI Ferroelectric
Semiconductor ZnO

 

 

 

C. Paz De Araujo

Symetrics Corp.
CO,USA

Device Physics and Process Optimization of Ferroelectric Storage Cells

 

 

 

 

M. Polomska

Institute of Molecular Physics

Polish Academy of Sciences

Poznan, Poland

Memory of Domain Wall Orientation in Ferroic with

Consecutive Phase Transition

 

 

 

 

 

I. Rychetsky , J. Petzelt

Random ferroelectric composites - dielectric response


 

M. Schumacher, J. Lindner, F. Schienle, D. Burgess,
P. Strzyzewski, M. Dauelsberg, E. Merz, H. Juergensen.


AIXTRON AG -
Kackertstrasse 15-17
52072 Aachen
Germany

Metal-Organic Chemical Vapor Deposited
Ceramic Thin Films for Future Memory Applications

 

 

 


 

 

 

H. Schmitt*, D. Simon*, B. Kirsch* and E. Birks**

* Universität des Saarlandes, Fachbereich Physik, 66123 Saarbrücken, Germany **Institute of Solid State Physics, University of Latvia, LV-1063 Riga, Latvia

Nanodomains, Intrinsic Instability and Glassy Behavior in Relaxor Materials


Wilfried Schranz

Institute of Experimental Physics
University of Vienna, Strudlhofgasse 4
A-1090 Wien

Dynamic elastic response of inhomogeneous materials


 

Takeshi Shigenari

Department of Applied Physics and Chemistry
University of Electro-Communications
Chofu, Tokyo 182-8585, Japan

The origin of incommensurate phases: unsolved problems in the
incommensurate phase in quartz.

 

 

Masaru Shimizu

Department of Electronics, Himeji Institute of Technology,
2167 Shosha, Himeji, Hyogo 671-2201, JAPAN

Preparation of Pb(Zr,Ti)O3 Thin Films by MOCVD
and Factors Affecting Their
Electrical Properties

 

 

 

V. Ya. Shur

Institute of Physics and Applied Mathematics

Ural State University

620083 Ekaterinburg, Russia


Kinetics of Domain Structure in Ferroelectric Thin Films

and in Relaxors

 




Yasunari Takagi

The University of Electro-Communications,
Department of Applied Physics and Chemistry,

Brillouin Scattering Study of Structural Phase Transition in KNO3 and CsNO3 Crystals

 

 

 

 

Mitsuho Tanimoto

Physics Lab. Asahikawa Medical College
Asahikawa 078-8510 Japan

Akira Onodera

Division of Physics,Graduate School of Science,Hokkaido University
Sapporo 060-0810 Japan

Tomoyuki Hikita

Department of Applied Physics,School of Engineering,Tohoku University
Aoba-yama 08, Sendai 980-8579 Japan

MACROSCOPIC AND LOCAL PROPERTIES OF LANGBEITITE CRYSTALS

 

 

Andreas Titze and Roland Boehmer

Institut fuer Physikalische Chemie
Johannes Gutenberg-Universitaet Mainz
55099 Mainz, Germany

DYNAMIC AND STATIC ASPECTS OF THE
ANTIFERROELECTRIC PHASE TRANSITION IN
Rb3H1-xDx(SO4)2 CRYSTALS: AN 87Rb-NMR STUDY


 

 

K. Uchiyama1), M. Kazumura2), Y. Shimada2), T. Otsuki2),
N. Solayappan3), V. Joshi3), C. A. Paz de Araujo3)

1) MECNARL, Panasonic Technologies, Inc., CO, USA
2) Semiconductor Company, Matsushita Electronics Corp., Osaka, Japan
3) Symetrix Corp., CO, USA

New Technologies for Future FeRAMs

 

 

G.H.F. van Raaij, T. Janssen

Institute for Theoretical Physics,
University of Nijmegen,
Toernooiveld 1,
NL-6525 ED Nijmegen,
The Netherlands.

Study of the phase diagram of the Sn2P2(S1-xSex)6
crystal family using a lattice model


 

H. Vogt

Max-Planck-Institut f\"ur Festk\"orperforschung, Heisenbergstr.
1, D-70569 Stuttgart, Germany.

The evolution of dipolar order in the relaxor-type system
K{1-x}LixTaO3 studied by hyper-Rayleigh and hyper-Raman scattering

 

 

 

T. Volk

Institute of Crystalography

Russian Academy of Sciences

117333 Moscow, Russia

Ferroelectricity in Photorefractives

 

 

Kiyotaka Wasa

Faculty of Science , Yokohama City University
22-2 Seto, Kanazawaku,
Yokohamashi 236-0027 Japan

Thin Film Effects in The Ferroelectric PbTiO3.

 

 

C. Ziebert*, J.K. Krüger*, H. Schmitt*, A. Sternberg***, K.H. Ehses*, M. Marx**

* Universität des Saarlandes, Fachbereich Physik, 66123 Saarbrücken, Germany
**Universität des Saarlandes, Werkstoffwissenschaften, 66123 Saarbrücken
***Institute of Solid State Physics, University of Latvia, LV-1063 Riga, Latvia

Nanocrystalline Perovskite Films: Ferroelectrics and Relaxors





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